Cadmium Telluride (CdTe) 

1,Purity : 5N(99.999%);6N(99.9999%)

2,Process :THM for CSS,VTD process to produce CdTe thin-film ;

3,Analysis :ICP-MS or GDMS (All impurity elements is below 10ppm;);LPSA;XRD;

4,Particle Size :Powder:-120mesh/+60Mesh;Granule:1-6mm;(or customize),Tabelt;

5,Service :Supply MSDS; Free sample; Solutions for material application;

6,Packing :Vacuum packing or Argon shield;

7,Application: CdTe thin-film solar cells ;CZT; HgxCd1-xTe;

8,Payment term : T/T 30days after customer approval;

9,Physical character: 

Molecular mass: 240.01

Band gap: 1.44 eV

Refractive index: 2.57

Density: ρ=5.85 g•cm−3

Melting Point: 1092℃ 

Boiling Point: 1130℃;

10, Specification: 

Cadmium telluride: 

CdTe-05 Grade 99.999. The content of Cadmium Telluride is above 99.999%. The total content of Ag, Al, As, Bi, Cu, Fe, Mg, Ni, Pb, Se, Si & Zn is bellow 10 ppm; 

CdTe-06 Grade 99.9999. The content of Cadmium Telluride is above 99.9999%. The total content of Ag, Al, As, Bi, Cu, Fe, Mg, Ni, Pb, Se, Si & Zn is bellow 1ppm; 

3, Physical Size: 

Lump, Powder.

4, Usage: 

It is mainly used in the manufacture of solar cells, infrared modulators, HgxCd1-xTe underlay, infrared electroluminescence electric eye, infrared detectors, X-ray detectors, nuclear radio activity detectors, approach visible light radiation etc.

• ProName: 99.999%Cadmium Telluride(CdTe)

• CasNo: 1306-25-8

• Application: Coating,Thin-film solar cells,Optical ...

• ProductionCapacity: Metric Ton/Day

• Purity: 4N(99.99%);5N(99.999%)

• LimitNum: 100 Gram

Elementary Substance:Te,In,Cd,Sn,Zn,S,Pb,Sb,Se,Bi,Cu,Co,Ga,Ge,Au,Ag,Pt,Pd etc.

Compound: CdTe,ZnTe,CuTe,Cu2Te,PbTe, Bi2Te3,SnTe,BiSbTe,GeSbTe,PbSnTe,CdZnTe,In2Se3,CdSe,ZnSe,CuSe,Cu2Se,Bi2Se3,Ga2Se3,BiTeSe,CuInSe2,SeGaInCu

CdS,ZnS,CuS,SnS2,Ga2S3,In2S3,Bi2S3,CuInS,CuIGeS,TeO2,ZnO,Bi2O3,In2O3,Sb2 O3,SnO2,Ga2O3,GaSb,InSb,InCl,GaInCu etc.

Sputtering Target:SeGaInCu,In2Se3,SnS2,CuS,In2S3,Bi2Te3,Sb2Te3,Sb2S3,CdS,CdTe etc.